Memory chip design for manufacturing
Techniques create a semiconductor layout comprising a resistor structure having a defined baseline sheet resistance. The semiconductor layout includes a resistor marker layer over the resistor structure. A sheet resistance matching estimate is performed to ascertain a difference between the baseline...
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creator | Chang, Runzi |
description | Techniques create a semiconductor layout comprising a resistor structure having a defined baseline sheet resistance. The semiconductor layout includes a resistor marker layer over the resistor structure. A sheet resistance matching estimate is performed to ascertain a difference between the baseline sheet resistance and a resultant sheet resistance if the resistor structure were to be manufactured using a manufacturing process. A mask generating algorithm is generated based on the difference effective to achieve a sheet resistance of the resistor structure that is closer to the baseline sheet resistance rather than the resultant sheet resistance. The mask generating algorithm enables one or more masks to be generated to modify the resistor structure relative to the resistor marker layer. |
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A sheet resistance matching estimate is performed to ascertain a difference between the baseline sheet resistance and a resultant sheet resistance if the resistor structure were to be manufactured using a manufacturing process. A mask generating algorithm is generated based on the difference effective to achieve a sheet resistance of the resistor structure that is closer to the baseline sheet resistance rather than the resultant sheet resistance. The mask generating algorithm enables one or more masks to be generated to modify the resistor structure relative to the resistor marker layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200602&DB=EPODOC&CC=US&NR=10672861B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200602&DB=EPODOC&CC=US&NR=10672861B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chang, Runzi</creatorcontrib><title>Memory chip design for manufacturing</title><description>Techniques create a semiconductor layout comprising a resistor structure having a defined baseline sheet resistance. The semiconductor layout includes a resistor marker layer over the resistor structure. A sheet resistance matching estimate is performed to ascertain a difference between the baseline sheet resistance and a resultant sheet resistance if the resistor structure were to be manufactured using a manufacturing process. A mask generating algorithm is generated based on the difference effective to achieve a sheet resistance of the resistor structure that is closer to the baseline sheet resistance rather than the resultant sheet resistance. The mask generating algorithm enables one or more masks to be generated to modify the resistor structure relative to the resistor marker layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDxTc3NL6pUSM7ILFBISS3OTM9TSMsvUshNzCtNS0wuKS3KzEvnYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBmbmRhZmhk6GxsSoAQAZ1CcN</recordid><startdate>20200602</startdate><enddate>20200602</enddate><creator>Chang, Runzi</creator><scope>EVB</scope></search><sort><creationdate>20200602</creationdate><title>Memory chip design for manufacturing</title><author>Chang, Runzi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10672861B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chang, Runzi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chang, Runzi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory chip design for manufacturing</title><date>2020-06-02</date><risdate>2020</risdate><abstract>Techniques create a semiconductor layout comprising a resistor structure having a defined baseline sheet resistance. The semiconductor layout includes a resistor marker layer over the resistor structure. A sheet resistance matching estimate is performed to ascertain a difference between the baseline sheet resistance and a resultant sheet resistance if the resistor structure were to be manufactured using a manufacturing process. A mask generating algorithm is generated based on the difference effective to achieve a sheet resistance of the resistor structure that is closer to the baseline sheet resistance rather than the resultant sheet resistance. The mask generating algorithm enables one or more masks to be generated to modify the resistor structure relative to the resistor marker layer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES |
title | Memory chip design for manufacturing |
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