Integrated structures and methods of forming vertically-stacked memory cells

Some embodiments include a method of forming vertically-stacked memory cells. An opening is formed through a stack of alternating insulative and conductive levels. Cavities are formed to extend into the conductive levels along sidewalls of the opening. At least one of the cavities is formed to be sh...

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Bibliographische Detailangaben

Hauptverfasser:	Haller, Gordon A, Zhu, Hongbin, Dennison, Charles H, Cleereman, Brian, He, Lining, Khandekar, Anish A, Lowe, Brett D
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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