Ion source head structure of semiconductor ion implanter

Ion source head structure of semiconductor ion implanter

An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the r...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Huang, Kun-Shu, Wei, Yi-Cheng, Lin, Wen-Hao, Hsu, Ta-Chen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Huang, Kun-Shu
Wei, Yi-Cheng
Lin, Wen-Hao
Hsu, Ta-Chen
description An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the receiving space. The cathode clamp clamps the cathode. The insulation assembly is disposed between the filament clamp and the cathode clamp such that the filament clamp is insulated from the cathode clamp. The insulation assembly has a first surface, a second surface opposite to the first surface, and an outer surface between the first surface and the second surface, wherein the first surface of the insulation assembly is in contact with the filament clamp, and the second surface of the insulation assembly is in contact with the cathode clamp. A step difference exists on the outer surface of the insulation assembly.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10658149B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10658149B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10658149B13</originalsourceid><addsrcrecordid>eNrjZLDwzM9TKM4vLUpOVchITUxRKC4pKk0uKS1KVchPUyhOzc1Mzs9LAYrkFylkApVm5hbkJOaVpBbxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDAzNTC0MTSydDY2LUAAAt7i7V</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Ion source head structure of semiconductor ion implanter</title><source>esp@cenet</source><creator>Huang, Kun-Shu ; Wei, Yi-Cheng ; Lin, Wen-Hao ; Hsu, Ta-Chen</creator><creatorcontrib>Huang, Kun-Shu ; Wei, Yi-Cheng ; Lin, Wen-Hao ; Hsu, Ta-Chen</creatorcontrib><description>An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the receiving space. The cathode clamp clamps the cathode. The insulation assembly is disposed between the filament clamp and the cathode clamp such that the filament clamp is insulated from the cathode clamp. The insulation assembly has a first surface, a second surface opposite to the first surface, and an outer surface between the first surface and the second surface, wherein the first surface of the insulation assembly is in contact with the filament clamp, and the second surface of the insulation assembly is in contact with the cathode clamp. A step difference exists on the outer surface of the insulation assembly.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200519&amp;DB=EPODOC&amp;CC=US&amp;NR=10658149B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200519&amp;DB=EPODOC&amp;CC=US&amp;NR=10658149B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Huang, Kun-Shu</creatorcontrib><creatorcontrib>Wei, Yi-Cheng</creatorcontrib><creatorcontrib>Lin, Wen-Hao</creatorcontrib><creatorcontrib>Hsu, Ta-Chen</creatorcontrib><title>Ion source head structure of semiconductor ion implanter</title><description>An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the receiving space. The cathode clamp clamps the cathode. The insulation assembly is disposed between the filament clamp and the cathode clamp such that the filament clamp is insulated from the cathode clamp. The insulation assembly has a first surface, a second surface opposite to the first surface, and an outer surface between the first surface and the second surface, wherein the first surface of the insulation assembly is in contact with the filament clamp, and the second surface of the insulation assembly is in contact with the cathode clamp. A step difference exists on the outer surface of the insulation assembly.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwzM9TKM4vLUpOVchITUxRKC4pKk0uKS1KVchPUyhOzc1Mzs9LAYrkFylkApVm5hbkJOaVpBbxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDAzNTC0MTSydDY2LUAAAt7i7V</recordid><startdate>20200519</startdate><enddate>20200519</enddate><creator>Huang, Kun-Shu</creator><creator>Wei, Yi-Cheng</creator><creator>Lin, Wen-Hao</creator><creator>Hsu, Ta-Chen</creator><scope>EVB</scope></search><sort><creationdate>20200519</creationdate><title>Ion source head structure of semiconductor ion implanter</title><author>Huang, Kun-Shu ; Wei, Yi-Cheng ; Lin, Wen-Hao ; Hsu, Ta-Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10658149B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>Huang, Kun-Shu</creatorcontrib><creatorcontrib>Wei, Yi-Cheng</creatorcontrib><creatorcontrib>Lin, Wen-Hao</creatorcontrib><creatorcontrib>Hsu, Ta-Chen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, Kun-Shu</au><au>Wei, Yi-Cheng</au><au>Lin, Wen-Hao</au><au>Hsu, Ta-Chen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ion source head structure of semiconductor ion implanter</title><date>2020-05-19</date><risdate>2020</risdate><abstract>An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the receiving space. The cathode clamp clamps the cathode. The insulation assembly is disposed between the filament clamp and the cathode clamp such that the filament clamp is insulated from the cathode clamp. The insulation assembly has a first surface, a second surface opposite to the first surface, and an outer surface between the first surface and the second surface, wherein the first surface of the insulation assembly is in contact with the filament clamp, and the second surface of the insulation assembly is in contact with the cathode clamp. A step difference exists on the outer surface of the insulation assembly.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10658149B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title Ion source head structure of semiconductor ion implanter
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T17%3A47%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Huang,%20Kun-Shu&rft.date=2020-05-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10658149B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true