Pattern correction in multiple patterning steps
This application discloses a computing system to simulate a wafer image based on a mandrel mask and a block mask to be utilized to print a final wafer image on a substrate. To simulate the wafer image the computing system can estimate dummy sidewalls based on the mandrel mask, estimate contours of t...
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| creator | Word, James C AbdelWahed, Shady |
| description | This application discloses a computing system to simulate a wafer image based on a mandrel mask and a block mask to be utilized to print a final wafer image on a substrate. To simulate the wafer image the computing system can estimate dummy sidewalls based on the mandrel mask, estimate contours of the block mask, and determine the simulated wafer image based on differences between the dummy sidewalls and the estimated contours of the block mask. The computing system can compare the simulated wafer image against a target wafer image in a layout design to identify hotspots where the simulated wafer image deviates from the target wafer image. Based on the identified hotspots, the computing system can modify the target wafer image in the layout design, prioritize edge modification in a subsequent optical proximity correction process, or modify computation of image error, which drives the optical proximity correction process. |
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To simulate the wafer image the computing system can estimate dummy sidewalls based on the mandrel mask, estimate contours of the block mask, and determine the simulated wafer image based on differences between the dummy sidewalls and the estimated contours of the block mask. The computing system can compare the simulated wafer image against a target wafer image in a layout design to identify hotspots where the simulated wafer image deviates from the target wafer image. Based on the identified hotspots, the computing system can modify the target wafer image in the layout design, prioritize edge modification in a subsequent optical proximity correction process, or modify computation of image error, which drives the optical proximity correction process.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CALCULATING ; CINEMATOGRAPHY ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTROGRAPHY ; HOLOGRAPHY ; INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200519&DB=EPODOC&CC=US&NR=10656517B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200519&DB=EPODOC&CC=US&NR=10656517B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Word, James C</creatorcontrib><creatorcontrib>AbdelWahed, Shady</creatorcontrib><title>Pattern correction in multiple patterning steps</title><description>This application discloses a computing system to simulate a wafer image based on a mandrel mask and a block mask to be utilized to print a final wafer image on a substrate. 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Based on the identified hotspots, the computing system can modify the target wafer image in the layout design, prioritize edge modification in a subsequent optical proximity correction process, or modify computation of image error, which drives the optical proximity correction process.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CALCULATING</subject><subject>CINEMATOGRAPHY</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAPSCwpSS3KU0jOLypKTS7JzM9TyMxTyC3NKcksyElVKIBIZ-alKxSXpBYU8zCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-NBgQwMzUzNTQ3MnI2Ni1AAAcGorrA</recordid><startdate>20200519</startdate><enddate>20200519</enddate><creator>Word, James C</creator><creator>AbdelWahed, Shady</creator><scope>EVB</scope></search><sort><creationdate>20200519</creationdate><title>Pattern correction in multiple patterning steps</title><author>Word, James C ; AbdelWahed, Shady</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10656517B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CALCULATING</topic><topic>CINEMATOGRAPHY</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Word, James C</creatorcontrib><creatorcontrib>AbdelWahed, Shady</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Word, James C</au><au>AbdelWahed, Shady</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Pattern correction in multiple patterning steps</title><date>2020-05-19</date><risdate>2020</risdate><abstract>This application discloses a computing system to simulate a wafer image based on a mandrel mask and a block mask to be utilized to print a final wafer image on a substrate. To simulate the wafer image the computing system can estimate dummy sidewalls based on the mandrel mask, estimate contours of the block mask, and determine the simulated wafer image based on differences between the dummy sidewalls and the estimated contours of the block mask. The computing system can compare the simulated wafer image against a target wafer image in a layout design to identify hotspots where the simulated wafer image deviates from the target wafer image. Based on the identified hotspots, the computing system can modify the target wafer image in the layout design, prioritize edge modification in a subsequent optical proximity correction process, or modify computation of image error, which drives the optical proximity correction process.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTROGRAPHY HOLOGRAPHY INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Pattern correction in multiple patterning steps |
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