Via structures and via patterning using oblique angle deposition processes

Via structures and via patterning using oblique angle deposition processes

The present disclosure relates to semiconductor structures and, more particularly, to via structures and via patterning using oblique angle deposition processes. The method includes: depositing a material on a lower wiring layer; forming one or more openings in the material; filling the one or more...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: K M Mahalingam, Anbu Selvam, Takmeel, Qanit, Child, Craig M, Ghosh, Somnath, Singh, Sunil K
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to via structures and via patterning using oblique angle deposition processes. The method includes: depositing a material on a lower wiring layer; forming one or more openings in the material; filling the one or more openings with a conductive material; growing via structures on the conductive material; forming interlevel dielectric material on the via structures; and forming an upper wiring layer on the interlevel dielectric material and in contact with the via structures.