Selective deposition defects removal by chemical etch

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surf...

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Hauptverfasser: Zhou, Lei, Schmiege, Benjamin, Jackson, Michael S, Ma, Paul F, Wu, Liqi, Ke, Chang, Jian, Guoqiang, Anthis, Jeffrey W, Jain, Pratham
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creator Zhou, Lei
Schmiege, Benjamin
Jackson, Michael S
Ma, Paul F
Wu, Liqi
Ke, Chang
Jian, Guoqiang
Anthis, Jeffrey W
Jain, Pratham
description Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Selective deposition defects removal by chemical etch
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