Strained perpendicular magnetic tunnel junction devices
MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding...
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creator | Maertz, Brian Doczy, Mark L Golonzka, Oleg Doyle, Brian S Ghani, Tahir Wiegand, Christopher J O'Brien, Kevin P Oguz, Kaan Madras, Prashanth P Rahman, MD Tofizur |
description | MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10636960B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10636960B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10636960B23</originalsourceid><addsrcrecordid>eNrjZDAPLilKzMxLTVEoSC0qSM1LyUwuzUksUshNTM9LLclMVigpzctLzVHIKs1LLsnMz1NISS3LTE4t5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpQP3xocGGBmbGZpZmBk5GxsSoAQAmNS7D</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Strained perpendicular magnetic tunnel junction devices</title><source>esp@cenet</source><creator>Maertz, Brian ; Doczy, Mark L ; Golonzka, Oleg ; Doyle, Brian S ; Ghani, Tahir ; Wiegand, Christopher J ; O'Brien, Kevin P ; Oguz, Kaan ; Madras, Prashanth P ; Rahman, MD Tofizur</creator><creatorcontrib>Maertz, Brian ; Doczy, Mark L ; Golonzka, Oleg ; Doyle, Brian S ; Ghani, Tahir ; Wiegand, Christopher J ; O'Brien, Kevin P ; Oguz, Kaan ; Madras, Prashanth P ; Rahman, MD Tofizur</creatorcontrib><description>MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; MAGNETS ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SEMICONDUCTOR DEVICES ; STATIC STORES ; TRANSFORMERS</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200428&DB=EPODOC&CC=US&NR=10636960B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200428&DB=EPODOC&CC=US&NR=10636960B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Maertz, Brian</creatorcontrib><creatorcontrib>Doczy, Mark L</creatorcontrib><creatorcontrib>Golonzka, Oleg</creatorcontrib><creatorcontrib>Doyle, Brian S</creatorcontrib><creatorcontrib>Ghani, Tahir</creatorcontrib><creatorcontrib>Wiegand, Christopher J</creatorcontrib><creatorcontrib>O'Brien, Kevin P</creatorcontrib><creatorcontrib>Oguz, Kaan</creatorcontrib><creatorcontrib>Madras, Prashanth P</creatorcontrib><creatorcontrib>Rahman, MD Tofizur</creatorcontrib><title>Strained perpendicular magnetic tunnel junction devices</title><description>MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>MAGNETS</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPLilKzMxLTVEoSC0qSM1LyUwuzUksUshNTM9LLclMVigpzctLzVHIKs1LLsnMz1NISS3LTE4t5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpQP3xocGGBmbGZpZmBk5GxsSoAQAmNS7D</recordid><startdate>20200428</startdate><enddate>20200428</enddate><creator>Maertz, Brian</creator><creator>Doczy, Mark L</creator><creator>Golonzka, Oleg</creator><creator>Doyle, Brian S</creator><creator>Ghani, Tahir</creator><creator>Wiegand, Christopher J</creator><creator>O'Brien, Kevin P</creator><creator>Oguz, Kaan</creator><creator>Madras, Prashanth P</creator><creator>Rahman, MD Tofizur</creator><scope>EVB</scope></search><sort><creationdate>20200428</creationdate><title>Strained perpendicular magnetic tunnel junction devices</title><author>Maertz, Brian ; Doczy, Mark L ; Golonzka, Oleg ; Doyle, Brian S ; Ghani, Tahir ; Wiegand, Christopher J ; O'Brien, Kevin P ; Oguz, Kaan ; Madras, Prashanth P ; Rahman, MD Tofizur</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10636960B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>MAGNETS</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>Maertz, Brian</creatorcontrib><creatorcontrib>Doczy, Mark L</creatorcontrib><creatorcontrib>Golonzka, Oleg</creatorcontrib><creatorcontrib>Doyle, Brian S</creatorcontrib><creatorcontrib>Ghani, Tahir</creatorcontrib><creatorcontrib>Wiegand, Christopher J</creatorcontrib><creatorcontrib>O'Brien, Kevin P</creatorcontrib><creatorcontrib>Oguz, Kaan</creatorcontrib><creatorcontrib>Madras, Prashanth P</creatorcontrib><creatorcontrib>Rahman, MD Tofizur</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Maertz, Brian</au><au>Doczy, Mark L</au><au>Golonzka, Oleg</au><au>Doyle, Brian S</au><au>Ghani, Tahir</au><au>Wiegand, Christopher J</au><au>O'Brien, Kevin P</au><au>Oguz, Kaan</au><au>Madras, Prashanth P</au><au>Rahman, MD Tofizur</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Strained perpendicular magnetic tunnel junction devices</title><date>2020-04-28</date><risdate>2020</risdate><abstract>MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS |
title | Strained perpendicular magnetic tunnel junction devices |
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