Metal via processing schemes with via critical dimension (CD) control for back end of line (BEOL) interconnects and the resulting structures

Via CD control for BEOL interconnects is described. For example, a method of fabricating an interconnect structure includes forming a lower metallization layer comprising alternating metal lines and dielectric lines above a substrate. The method also includes forming an inter-layer dielectric layer...

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Bibliographische Detailangaben

Hauptverfasser:	Nyhus, Paul A, Kaplan, Alexander F, Haran, Mohit K, Rao, Deepak S, Wallace, Charles H, Bigwood, Robert M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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