Sensor misalignment measuring device

The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor devi...

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Bibliographische Detailangaben
Hauptverfasser:	Baldasarre, Leonardo, Gurin, Ilya
Format:	Patent
Sprache:	eng
Schlagworte:	ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING ELECTRIC VARIABLES MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS MEASURING MAGNETIC VARIABLES MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR PHYSICS SEMICONDUCTOR DEVICES TARIFF METERING APPARATUS TESTING
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Beschreibung
Zusammenfassung:	The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.