Contact resistance reduction for advanced technology nodes

A source/drain contact includes a first portion arranged on a substrate and extending between a first gate and a second gate; a second portion arranged on the first portion and extending over the first gate and the second gate, the second portion including a partially recessed liner and a metal disp...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pranatharthiharan, Balasubramanian, Surisetty, Charan V. V. S, Ok, Injo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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