Backside contact to a final substrate

A device structure is formed using a silicon-on-insulator substrate. The device structure includes a first switch and a second switch that are formed within a device layer of the silicon-on-insulator substrate and between a buried insulator layer of the silicon on-insulator substrate and a dielectri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Stamper, Anthony K, Gambino, Jeffrey P, Shank, Steven M, Jaffe, Mark D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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