Magnetic memory device and method of manufacturing the same

Magnetic memory device and method of manufacturing the same

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization directio...

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Hauptverfasser: Hosotani, Keiji, Aikawa, Hisanori, Toko, Masaru, Kishi, Tatsuya
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Hosotani, Keiji
Aikawa, Hisanori
Toko, Masaru
Kishi, Tatsuya
description According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10622545B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10622545B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10622545B23</originalsourceid><addsrcrecordid>eNrjZLD2TUzPSy3JTFbITc3NL6pUSEkty0xOVUjMSwGKlGTkpyjkpynkJuaVpiUml5QWZealK5RkpCoUJ-am8jCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxORUoNHxocGGBmZGRqYmpk5GxsSoAQCdMS9d</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Magnetic memory device and method of manufacturing the same</title><source>esp@cenet</source><creator>Hosotani, Keiji ; Aikawa, Hisanori ; Toko, Masaru ; Kishi, Tatsuya</creator><creatorcontrib>Hosotani, Keiji ; Aikawa, Hisanori ; Toko, Masaru ; Kishi, Tatsuya</creatorcontrib><description>According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200414&amp;DB=EPODOC&amp;CC=US&amp;NR=10622545B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200414&amp;DB=EPODOC&amp;CC=US&amp;NR=10622545B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hosotani, Keiji</creatorcontrib><creatorcontrib>Aikawa, Hisanori</creatorcontrib><creatorcontrib>Toko, Masaru</creatorcontrib><creatorcontrib>Kishi, Tatsuya</creatorcontrib><title>Magnetic memory device and method of manufacturing the same</title><description>According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2TUzPSy3JTFbITc3NL6pUSEkty0xOVUjMSwGKlGTkpyjkpynkJuaVpiUml5QWZealK5RkpCoUJ-am8jCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxORUoNHxocGGBmZGRqYmpk5GxsSoAQCdMS9d</recordid><startdate>20200414</startdate><enddate>20200414</enddate><creator>Hosotani, Keiji</creator><creator>Aikawa, Hisanori</creator><creator>Toko, Masaru</creator><creator>Kishi, Tatsuya</creator><scope>EVB</scope></search><sort><creationdate>20200414</creationdate><title>Magnetic memory device and method of manufacturing the same</title><author>Hosotani, Keiji ; Aikawa, Hisanori ; Toko, Masaru ; Kishi, Tatsuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10622545B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Hosotani, Keiji</creatorcontrib><creatorcontrib>Aikawa, Hisanori</creatorcontrib><creatorcontrib>Toko, Masaru</creatorcontrib><creatorcontrib>Kishi, Tatsuya</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hosotani, Keiji</au><au>Aikawa, Hisanori</au><au>Toko, Masaru</au><au>Kishi, Tatsuya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetic memory device and method of manufacturing the same</title><date>2020-04-14</date><risdate>2020</risdate><abstract>According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Magnetic memory device and method of manufacturing the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T17%3A43%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hosotani,%20Keiji&rft.date=2020-04-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10622545B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true