Trench transistor device

A transistor device includes a semiconductor mesa region between first and second trenches in a semiconductor body, a body region of a first conductivity type and a source region of a second conductivity type in the semiconductor mesa region, a drift region of the second conductivity type in the sem...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Vellei, Antonio, Laven, Johannes Georg, Jaeger, Christian, Wolter, Frank, Philippou, Alexander, Pfirsch, Frank
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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