Operation method of nonvolatile memory device and storage device
An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cell...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Kim, Jisu Shin, Dongjin Oh, Eun Chu Kong, Jun Jin Song, Taehyun Jin, Dongsup Bang, Jinbae Byeon, Daeseok Yoon, Pilsang Son, Hong Rak |
| description | An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10607708B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10607708B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10607708B23</originalsourceid><addsrcrecordid>eNrjZHDwL0gtSizJzM9TyE0tychPUchPU8jLzyvLzwGK5qQCRXPziyoVUlLLMpNTFRLzUhSKS_KLEtNToUI8DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-NNjQwMzA3NzAwsnImBg1AO1JMag</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Operation method of nonvolatile memory device and storage device</title><source>esp@cenet</source><creator>Kim, Jisu ; Shin, Dongjin ; Oh, Eun Chu ; Kong, Jun Jin ; Song, Taehyun ; Jin, Dongsup ; Bang, Jinbae ; Byeon, Daeseok ; Yoon, Pilsang ; Son, Hong Rak</creator><creatorcontrib>Kim, Jisu ; Shin, Dongjin ; Oh, Eun Chu ; Kong, Jun Jin ; Song, Taehyun ; Jin, Dongsup ; Bang, Jinbae ; Byeon, Daeseok ; Yoon, Pilsang ; Son, Hong Rak</creatorcontrib><description>An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200331&DB=EPODOC&CC=US&NR=10607708B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200331&DB=EPODOC&CC=US&NR=10607708B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Jisu</creatorcontrib><creatorcontrib>Shin, Dongjin</creatorcontrib><creatorcontrib>Oh, Eun Chu</creatorcontrib><creatorcontrib>Kong, Jun Jin</creatorcontrib><creatorcontrib>Song, Taehyun</creatorcontrib><creatorcontrib>Jin, Dongsup</creatorcontrib><creatorcontrib>Bang, Jinbae</creatorcontrib><creatorcontrib>Byeon, Daeseok</creatorcontrib><creatorcontrib>Yoon, Pilsang</creatorcontrib><creatorcontrib>Son, Hong Rak</creatorcontrib><title>Operation method of nonvolatile memory device and storage device</title><description>An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDwL0gtSizJzM9TyE0tychPUchPU8jLzyvLzwGK5qQCRXPziyoVUlLLMpNTFRLzUhSKS_KLEtNToUI8DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-NNjQwMzA3NzAwsnImBg1AO1JMag</recordid><startdate>20200331</startdate><enddate>20200331</enddate><creator>Kim, Jisu</creator><creator>Shin, Dongjin</creator><creator>Oh, Eun Chu</creator><creator>Kong, Jun Jin</creator><creator>Song, Taehyun</creator><creator>Jin, Dongsup</creator><creator>Bang, Jinbae</creator><creator>Byeon, Daeseok</creator><creator>Yoon, Pilsang</creator><creator>Son, Hong Rak</creator><scope>EVB</scope></search><sort><creationdate>20200331</creationdate><title>Operation method of nonvolatile memory device and storage device</title><author>Kim, Jisu ; Shin, Dongjin ; Oh, Eun Chu ; Kong, Jun Jin ; Song, Taehyun ; Jin, Dongsup ; Bang, Jinbae ; Byeon, Daeseok ; Yoon, Pilsang ; Son, Hong Rak</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10607708B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jisu</creatorcontrib><creatorcontrib>Shin, Dongjin</creatorcontrib><creatorcontrib>Oh, Eun Chu</creatorcontrib><creatorcontrib>Kong, Jun Jin</creatorcontrib><creatorcontrib>Song, Taehyun</creatorcontrib><creatorcontrib>Jin, Dongsup</creatorcontrib><creatorcontrib>Bang, Jinbae</creatorcontrib><creatorcontrib>Byeon, Daeseok</creatorcontrib><creatorcontrib>Yoon, Pilsang</creatorcontrib><creatorcontrib>Son, Hong Rak</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Jisu</au><au>Shin, Dongjin</au><au>Oh, Eun Chu</au><au>Kong, Jun Jin</au><au>Song, Taehyun</au><au>Jin, Dongsup</au><au>Bang, Jinbae</au><au>Byeon, Daeseok</au><au>Yoon, Pilsang</au><au>Son, Hong Rak</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Operation method of nonvolatile memory device and storage device</title><date>2020-03-31</date><risdate>2020</risdate><abstract>An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US10607708B2 |
| source | esp@cenet |
| subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Operation method of nonvolatile memory device and storage device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T11%3A36%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Jisu&rft.date=2020-03-31&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10607708B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |