Semiconductor device and method for fabricating the same

A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, Sung Gil, Ahn, Jae Young, Kim, Hong Suk, Choi, Ji Hoon, Noh, Jin Tae, Kim, Seul Ye
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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