Plasma generation apparatus, substrate treating apparatus including the same, and control method for the plasma generation apparatus
A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma st...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor. |
---|