Read process in a semiconductor memory device including a memory cell transistor

According to one embodiment, a semiconductor memory device includes: a word line; a first memory cell; a first circuit; and a second circuit. The first memory cell is connected to the word line. The first circuit generates a first voltage having a waveform including a first time period during which...

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Bibliographische Detailangaben

Hauptverfasser:	Nagata, Motoki, Shiga, Hitoshi, Shimizu, Kan, Saigusa, Shigehito, Morimoto, Makoto, Fujimoto, Ryuichi, Takada, Yumi
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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