Physically unclonable camouflage structure and methods for fabricating same

An application specific integrated circuit (ASIC) and a method for its design and fabrication is disclosed. In one embodiment, the camouflaged application specific integrated circuit (ASIC), comprises a plurality of interconnected functional logic cells that together perform one or more ASIC logical...

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Hauptverfasser: Chow, Lap Wai, Wang, Bryan J, Cocchi, Ronald P, Baukus, James P
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creator Chow, Lap Wai
Wang, Bryan J
Cocchi, Ronald P
Baukus, James P
description An application specific integrated circuit (ASIC) and a method for its design and fabrication is disclosed. In one embodiment, the camouflaged application specific integrated circuit (ASIC), comprises a plurality of interconnected functional logic cells that together perform one or more ASIC logical functions, wherein the functional logic cells comprise a camouflage cell including: a source region of a first conductivity type, a drain region of the first conductivity type, and a camouflage region of a second conductivity type disposed between the source region and the drain region. The camouflage region renders the camouflage cell always off in a first camouflage cell configuration and always on in a second camouflage cell configuration having a planar layout substantially indistinguishable from the first configuration.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10574237B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10574237B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10574237B23</originalsourceid><addsrcrecordid>eNqNy7EKwjAQgOEsDqK-w_kAgrZK94oiuAjqXK7ppS1cciWXDH17HXwAp3_5_qW5P4ZZR4vMM-RgWQK2TGDRS3aMPYGmmG3KkQBDB57SIJ2CkwgO2_hd0xh6UPS0NguHrLT5dWW218vrfNvRJA3phJYCpeb9POxP1bEoq7oo_zEfvSc2OA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Physically unclonable camouflage structure and methods for fabricating same</title><source>esp@cenet</source><creator>Chow, Lap Wai ; Wang, Bryan J ; Cocchi, Ronald P ; Baukus, James P</creator><creatorcontrib>Chow, Lap Wai ; Wang, Bryan J ; Cocchi, Ronald P ; Baukus, James P</creatorcontrib><description>An application specific integrated circuit (ASIC) and a method for its design and fabrication is disclosed. In one embodiment, the camouflaged application specific integrated circuit (ASIC), comprises a plurality of interconnected functional logic cells that together perform one or more ASIC logical functions, wherein the functional logic cells comprise a camouflage cell including: a source region of a first conductivity type, a drain region of the first conductivity type, and a camouflage region of a second conductivity type disposed between the source region and the drain region. The camouflage region renders the camouflage cell always off in a first camouflage cell configuration and always on in a second camouflage cell configuration having a planar layout substantially indistinguishable from the first configuration.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; PULSE TECHNIQUE ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200225&amp;DB=EPODOC&amp;CC=US&amp;NR=10574237B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200225&amp;DB=EPODOC&amp;CC=US&amp;NR=10574237B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chow, Lap Wai</creatorcontrib><creatorcontrib>Wang, Bryan J</creatorcontrib><creatorcontrib>Cocchi, Ronald P</creatorcontrib><creatorcontrib>Baukus, James P</creatorcontrib><title>Physically unclonable camouflage structure and methods for fabricating same</title><description>An application specific integrated circuit (ASIC) and a method for its design and fabrication is disclosed. In one embodiment, the camouflaged application specific integrated circuit (ASIC), comprises a plurality of interconnected functional logic cells that together perform one or more ASIC logical functions, wherein the functional logic cells comprise a camouflage cell including: a source region of a first conductivity type, a drain region of the first conductivity type, and a camouflage region of a second conductivity type disposed between the source region and the drain region. The camouflage region renders the camouflage cell always off in a first camouflage cell configuration and always on in a second camouflage cell configuration having a planar layout substantially indistinguishable from the first configuration.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PHYSICS</subject><subject>PULSE TECHNIQUE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAQgOEsDqK-w_kAgrZK94oiuAjqXK7ppS1cciWXDH17HXwAp3_5_qW5P4ZZR4vMM-RgWQK2TGDRS3aMPYGmmG3KkQBDB57SIJ2CkwgO2_hd0xh6UPS0NguHrLT5dWW218vrfNvRJA3phJYCpeb9POxP1bEoq7oo_zEfvSc2OA</recordid><startdate>20200225</startdate><enddate>20200225</enddate><creator>Chow, Lap Wai</creator><creator>Wang, Bryan J</creator><creator>Cocchi, Ronald P</creator><creator>Baukus, James P</creator><scope>EVB</scope></search><sort><creationdate>20200225</creationdate><title>Physically unclonable camouflage structure and methods for fabricating same</title><author>Chow, Lap Wai ; Wang, Bryan J ; Cocchi, Ronald P ; Baukus, James P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10574237B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PHYSICS</topic><topic>PULSE TECHNIQUE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chow, Lap Wai</creatorcontrib><creatorcontrib>Wang, Bryan J</creatorcontrib><creatorcontrib>Cocchi, Ronald P</creatorcontrib><creatorcontrib>Baukus, James P</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chow, Lap Wai</au><au>Wang, Bryan J</au><au>Cocchi, Ronald P</au><au>Baukus, James P</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Physically unclonable camouflage structure and methods for fabricating same</title><date>2020-02-25</date><risdate>2020</risdate><abstract>An application specific integrated circuit (ASIC) and a method for its design and fabrication is disclosed. In one embodiment, the camouflaged application specific integrated circuit (ASIC), comprises a plurality of interconnected functional logic cells that together perform one or more ASIC logical functions, wherein the functional logic cells comprise a camouflage cell including: a source region of a first conductivity type, a drain region of the first conductivity type, and a camouflage region of a second conductivity type disposed between the source region and the drain region. The camouflage region renders the camouflage cell always off in a first camouflage cell configuration and always on in a second camouflage cell configuration having a planar layout substantially indistinguishable from the first configuration.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
title Physically unclonable camouflage structure and methods for fabricating same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T08%3A46%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Chow,%20Lap%20Wai&rft.date=2020-02-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10574237B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true