Three-dimensional semiconductor memory device and method of fabricating the same

Provided are a three-dimensional semiconductor memory device and a method of fabricating the same. The device may include a substrate including a peripheral circuit region and a cell array region, peripheral gate stacks provided on the peripheral circuit region of the substrate, and an electrode str...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yoon, Boun, Min, Chungki, Kwon, Myeongan, Kwon, Byoungho, Shin, Miso
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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