Processing method for wafer

A processing method for a wafer including a crack detection step for irradiating illumination of a wavelength transparent to wafer, picking up an image of the wafer, and detecting whether a crack is generated within the wafer, a crack direction verification step for verifying, when a crack is detect...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Morikazu, Hiroshi, Takeda, Noboru
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A processing method for a wafer including a crack detection step for irradiating illumination of a wavelength transparent to wafer, picking up an image of the wafer, and detecting whether a crack is generated within the wafer, a crack direction verification step for verifying, when a crack is detected, to which one of the first and second directions a direction in which the crack extends is nearer, a first cutting step for positioning the cutting blade to a scheduled division line of a direction decided to be a direction farther from the direction in which the crack extends from between the first and second directions and cutting the scheduled division line, and next a second cutting step for positioning the cutting blade to a scheduled division line of a direction decided to be nearer to the direction in which the crack extends and cutting the scheduled division line.