Techniques for processing a polycrystalline layer using an angled ion beam
A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first...
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| creator | Evans, Morgan Hautala, John Anglin, Kevin Ma, Tristan Y Masci, Robert J |
| description | A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position. |
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The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200204&DB=EPODOC&CC=US&NR=10553448B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200204&DB=EPODOC&CC=US&NR=10553448B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Evans, Morgan</creatorcontrib><creatorcontrib>Hautala, John</creatorcontrib><creatorcontrib>Anglin, Kevin</creatorcontrib><creatorcontrib>Ma, Tristan Y</creatorcontrib><creatorcontrib>Masci, Robert J</creatorcontrib><title>Techniques for processing a polycrystalline layer using an angled ion beam</title><description>A method of processing a layer. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Techniques for processing a polycrystalline layer using an angled ion beam |
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