Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same
A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and th...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Yen, Wen-Tsai Lee, Wen-Chin Chen, Shih-Wei Wu, Chung-Hsien Chen, Kuan-Chu |
| description | A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10546964B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10546964B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10546964B23</originalsourceid><addsrcrecordid>eNqNjD0KwkAQRtNYiHqH8QCCPzFgqyg2VmodNruTZHF2JuxskNzeCB7A4uM1733TrLkJDZVD7gMoErJ3CNpXZAaMCm-fWrDCKQoROkitty9GVfAMKmQiWCRSMOwgYGrFKdQSvwuemzEY70zAeTapDSkufpxly8v5cbqusJMStTMWGVP5vG_W-7w4FPlxu_vH-QAYykCX</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same</title><source>esp@cenet</source><creator>Yen, Wen-Tsai ; Lee, Wen-Chin ; Chen, Shih-Wei ; Wu, Chung-Hsien ; Chen, Kuan-Chu</creator><creatorcontrib>Yen, Wen-Tsai ; Lee, Wen-Chin ; Chen, Shih-Wei ; Wu, Chung-Hsien ; Chen, Kuan-Chu</creatorcontrib><description>A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200128&DB=EPODOC&CC=US&NR=10546964B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200128&DB=EPODOC&CC=US&NR=10546964B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yen, Wen-Tsai</creatorcontrib><creatorcontrib>Lee, Wen-Chin</creatorcontrib><creatorcontrib>Chen, Shih-Wei</creatorcontrib><creatorcontrib>Wu, Chung-Hsien</creatorcontrib><creatorcontrib>Chen, Kuan-Chu</creatorcontrib><title>Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same</title><description>A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjD0KwkAQRtNYiHqH8QCCPzFgqyg2VmodNruTZHF2JuxskNzeCB7A4uM1733TrLkJDZVD7gMoErJ3CNpXZAaMCm-fWrDCKQoROkitty9GVfAMKmQiWCRSMOwgYGrFKdQSvwuemzEY70zAeTapDSkufpxly8v5cbqusJMStTMWGVP5vG_W-7w4FPlxu_vH-QAYykCX</recordid><startdate>20200128</startdate><enddate>20200128</enddate><creator>Yen, Wen-Tsai</creator><creator>Lee, Wen-Chin</creator><creator>Chen, Shih-Wei</creator><creator>Wu, Chung-Hsien</creator><creator>Chen, Kuan-Chu</creator><scope>EVB</scope></search><sort><creationdate>20200128</creationdate><title>Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same</title><author>Yen, Wen-Tsai ; Lee, Wen-Chin ; Chen, Shih-Wei ; Wu, Chung-Hsien ; Chen, Kuan-Chu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10546964B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Yen, Wen-Tsai</creatorcontrib><creatorcontrib>Lee, Wen-Chin</creatorcontrib><creatorcontrib>Chen, Shih-Wei</creatorcontrib><creatorcontrib>Wu, Chung-Hsien</creatorcontrib><creatorcontrib>Chen, Kuan-Chu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yen, Wen-Tsai</au><au>Lee, Wen-Chin</au><au>Chen, Shih-Wei</au><au>Wu, Chung-Hsien</au><au>Chen, Kuan-Chu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same</title><date>2020-01-28</date><risdate>2020</risdate><abstract>A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US10546964B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T20%3A48%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Yen,%20Wen-Tsai&rft.date=2020-01-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10546964B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |