Memory cell with oxide cap and spacer layer for protecting a floating gate from a source implant

A method of forming a memory cell, e.g., flash memory cell, may include (a) depositing polysilicon over a substrate, (b) depositing a mask over the polysilicon, (c) etching an opening in the mask to expose a surface of the polysilicon, (d) growing a floating gate oxide at the exposed polysilicon sur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hymas, Mel, Stom, Greg, Walls, James, Chen, Bomy
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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