Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof

Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof

A semiconductor device and a manufacturing method thereof are provided. The method includes providing a substrate, a plurality of word lines and a plurality of bit lines, and then forming a storage node contact on each source/drain region, so that a width of a top surface of each storage node contac...

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Hauptverfasser: Feng, Li-Wei, Liu, Tzu-Tsen, Ho, Chien-Ting
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Feng, Li-Wei
Liu, Tzu-Tsen
Ho, Chien-Ting
description A semiconductor device and a manufacturing method thereof are provided. The method includes providing a substrate, a plurality of word lines and a plurality of bit lines, and then forming a storage node contact on each source/drain region, so that a width of a top surface of each storage node contact in a direction is less than a width of a bottom surface of each storage node contact.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof
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