Semiconductor device including isolation regions

A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a secon...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ha, Dae Won, Yang, Kwang Yong, Hwang, Dong Hoon, Baek, Jong Hwa, Ha, Seung Mo, Park, Jae Young, Jeon, Jong Min, Sun, Min-Chul, Chung, Young Su
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Ha, Dae Won
Yang, Kwang Yong
Hwang, Dong Hoon
Baek, Jong Hwa
Ha, Seung Mo
Park, Jae Young
Jeon, Jong Min
Sun, Min-Chul
Chung, Young Su
description A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10529801B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10529801B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10529801B23</originalsourceid><addsrcrecordid>eNrjZDAITs3NTM7PSylNLskvUkhJLctMTlXIzEvOKU3JzEtXyCzOz0ksyczPUyhKTQdSxTwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD402NDA1MjSwsDQyciYGDUArNwsFA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device including isolation regions</title><source>esp@cenet</source><creator>Ha, Dae Won ; Yang, Kwang Yong ; Hwang, Dong Hoon ; Baek, Jong Hwa ; Ha, Seung Mo ; Park, Jae Young ; Jeon, Jong Min ; Sun, Min-Chul ; Chung, Young Su</creator><creatorcontrib>Ha, Dae Won ; Yang, Kwang Yong ; Hwang, Dong Hoon ; Baek, Jong Hwa ; Ha, Seung Mo ; Park, Jae Young ; Jeon, Jong Min ; Sun, Min-Chul ; Chung, Young Su</creatorcontrib><description>A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200107&amp;DB=EPODOC&amp;CC=US&amp;NR=10529801B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200107&amp;DB=EPODOC&amp;CC=US&amp;NR=10529801B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ha, Dae Won</creatorcontrib><creatorcontrib>Yang, Kwang Yong</creatorcontrib><creatorcontrib>Hwang, Dong Hoon</creatorcontrib><creatorcontrib>Baek, Jong Hwa</creatorcontrib><creatorcontrib>Ha, Seung Mo</creatorcontrib><creatorcontrib>Park, Jae Young</creatorcontrib><creatorcontrib>Jeon, Jong Min</creatorcontrib><creatorcontrib>Sun, Min-Chul</creatorcontrib><creatorcontrib>Chung, Young Su</creatorcontrib><title>Semiconductor device including isolation regions</title><description>A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAITs3NTM7PSylNLskvUkhJLctMTlXIzEvOKU3JzEtXyCzOz0ksyczPUyhKTQdSxTwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD402NDA1MjSwsDQyciYGDUArNwsFA</recordid><startdate>20200107</startdate><enddate>20200107</enddate><creator>Ha, Dae Won</creator><creator>Yang, Kwang Yong</creator><creator>Hwang, Dong Hoon</creator><creator>Baek, Jong Hwa</creator><creator>Ha, Seung Mo</creator><creator>Park, Jae Young</creator><creator>Jeon, Jong Min</creator><creator>Sun, Min-Chul</creator><creator>Chung, Young Su</creator><scope>EVB</scope></search><sort><creationdate>20200107</creationdate><title>Semiconductor device including isolation regions</title><author>Ha, Dae Won ; Yang, Kwang Yong ; Hwang, Dong Hoon ; Baek, Jong Hwa ; Ha, Seung Mo ; Park, Jae Young ; Jeon, Jong Min ; Sun, Min-Chul ; Chung, Young Su</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10529801B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Ha, Dae Won</creatorcontrib><creatorcontrib>Yang, Kwang Yong</creatorcontrib><creatorcontrib>Hwang, Dong Hoon</creatorcontrib><creatorcontrib>Baek, Jong Hwa</creatorcontrib><creatorcontrib>Ha, Seung Mo</creatorcontrib><creatorcontrib>Park, Jae Young</creatorcontrib><creatorcontrib>Jeon, Jong Min</creatorcontrib><creatorcontrib>Sun, Min-Chul</creatorcontrib><creatorcontrib>Chung, Young Su</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ha, Dae Won</au><au>Yang, Kwang Yong</au><au>Hwang, Dong Hoon</au><au>Baek, Jong Hwa</au><au>Ha, Seung Mo</au><au>Park, Jae Young</au><au>Jeon, Jong Min</au><au>Sun, Min-Chul</au><au>Chung, Young Su</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device including isolation regions</title><date>2020-01-07</date><risdate>2020</risdate><abstract>A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10529801B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device including isolation regions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T20%3A13%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ha,%20Dae%20Won&rft.date=2020-01-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10529801B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true