Methods for forming thin protective and optical layers on substrates
A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode an...
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| creator | Chatham, Hood Mantripragada, Sai Savas, Stephen E Wiesnoski, Allan Joh, Sooyun Galewski, Carl |
| description | A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode and the pedestal and between the third electrode and the pedestal. A second gap is formed between the first and second electrodes, and a third gap is formed between the second and third electrodes. A first radio frequency (RF) power supply is connected to the first and third electrodes and is configured to predominantly deliver power to plasmas located in the first gap. A second RF power supply is connected to the second electrode and is configured to predominantly deliver power to plasmas located in the second and third gaps. In such a configuration, the power density of the plasmas located in the first gap can be independently controlled relative to the power density of the plasmas located in the second and third gaps. |
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The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode and the pedestal and between the third electrode and the pedestal. A second gap is formed between the first and second electrodes, and a third gap is formed between the second and third electrodes. A first radio frequency (RF) power supply is connected to the first and third electrodes and is configured to predominantly deliver power to plasmas located in the first gap. A second RF power supply is connected to the second electrode and is configured to predominantly deliver power to plasmas located in the second and third gaps. In such a configuration, the power density of the plasmas located in the first gap can be independently controlled relative to the power density of the plasmas located in the second and third gaps.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200107&DB=EPODOC&CC=US&NR=10526708B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200107&DB=EPODOC&CC=US&NR=10526708B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chatham, Hood</creatorcontrib><creatorcontrib>Mantripragada, Sai</creatorcontrib><creatorcontrib>Savas, Stephen E</creatorcontrib><creatorcontrib>Wiesnoski, Allan</creatorcontrib><creatorcontrib>Joh, Sooyun</creatorcontrib><creatorcontrib>Galewski, Carl</creatorcontrib><title>Methods for forming thin protective and optical layers on substrates</title><description>A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. 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In such a configuration, the power density of the plasmas located in the first gap can be independently controlled relative to the power density of the plasmas located in the second and third gaps.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDxTS3JyE8pVkjLLwLh3My8dIWSjMw8hYKi_JLU5JLMslSFxLwUhfyCkszkxByFnMTK1KJihfw8heLSpOKSosSS1GIeBta0xJziVF4ozc2g6OYa4uyhm1qQH59aXJCYnJqXWhIfGmxoYGpkZm5g4WRkTIwaAOHDM1o</recordid><startdate>20200107</startdate><enddate>20200107</enddate><creator>Chatham, Hood</creator><creator>Mantripragada, Sai</creator><creator>Savas, Stephen E</creator><creator>Wiesnoski, Allan</creator><creator>Joh, Sooyun</creator><creator>Galewski, Carl</creator><scope>EVB</scope></search><sort><creationdate>20200107</creationdate><title>Methods for forming thin protective and optical layers on substrates</title><author>Chatham, Hood ; Mantripragada, Sai ; Savas, Stephen E ; Wiesnoski, Allan ; Joh, Sooyun ; Galewski, Carl</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10526708B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Chatham, Hood</creatorcontrib><creatorcontrib>Mantripragada, Sai</creatorcontrib><creatorcontrib>Savas, Stephen E</creatorcontrib><creatorcontrib>Wiesnoski, Allan</creatorcontrib><creatorcontrib>Joh, Sooyun</creatorcontrib><creatorcontrib>Galewski, Carl</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chatham, Hood</au><au>Mantripragada, Sai</au><au>Savas, Stephen E</au><au>Wiesnoski, Allan</au><au>Joh, Sooyun</au><au>Galewski, Carl</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods for forming thin protective and optical layers on substrates</title><date>2020-01-07</date><risdate>2020</risdate><abstract>A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Methods for forming thin protective and optical layers on substrates |
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