Method for processing silicon material

The present disclosure provides a method for accelerating the formation of defects in doped silicon. A doped silicon area is exposed with high intensity electromagnetic radiation to provide a substantial excess of majority carriers and promote a high rate of defect formation to allow efficient silic...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hallam, Brett Jason, Wenham, Stuart Ross, Abbott, Malcolm David, Hamer, Phillip George
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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