Active matrix substrate and X-ray imaging panel including same

An active matrix substrate 1 includes photoelectric conversion elements that are respectively provided with respect to a plurality of pixels defined by gate lines and data lines 10, and a bias line 13 supplying a bias voltage to each photoelectric conversion element. Further, the active matrix subst...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Moriwaki, Hiroyuki, Nakano, Fumiki, Nakamura, Wataru, Kubota, Akinori
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Moriwaki, Hiroyuki
Nakano, Fumiki
Nakamura, Wataru
Kubota, Akinori
description An active matrix substrate 1 includes photoelectric conversion elements that are respectively provided with respect to a plurality of pixels defined by gate lines and data lines 10, and a bias line 13 supplying a bias voltage to each photoelectric conversion element. Further, the active matrix substrate 1 further includes a plurality of data protection circuit units 16a that are connected with the data lines 10, respectively, and a first common line 17a that is connected with the data protection circuits 16a and has a potential equal to or lower than those of the data lines 10, outside the image pickup area composed of a plurality of pixels. The data protection circuit unit 16a includes a first data non-linear element 161a, and the first data non-linear element 161a is connected in a reverse bias state between the first common line 17a and the data lines 10.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10504888B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10504888B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10504888B23</originalsourceid><addsrcrecordid>eNrjZLBzTC7JLEtVyE0sKcqsUCguTSouKUosSVVIzEtRiNAtSqxUyMxNTM_MS1coSMxLzVHIzEvOKU0B8YsTc1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChgamBiYWFhZORMTFqAEDoMH4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Active matrix substrate and X-ray imaging panel including same</title><source>esp@cenet</source><creator>Moriwaki, Hiroyuki ; Nakano, Fumiki ; Nakamura, Wataru ; Kubota, Akinori</creator><creatorcontrib>Moriwaki, Hiroyuki ; Nakano, Fumiki ; Nakamura, Wataru ; Kubota, Akinori</creatorcontrib><description>An active matrix substrate 1 includes photoelectric conversion elements that are respectively provided with respect to a plurality of pixels defined by gate lines and data lines 10, and a bias line 13 supplying a bias voltage to each photoelectric conversion element. Further, the active matrix substrate 1 further includes a plurality of data protection circuit units 16a that are connected with the data lines 10, respectively, and a first common line 17a that is connected with the data protection circuits 16a and has a potential equal to or lower than those of the data lines 10, outside the image pickup area composed of a plurality of pixels. The data protection circuit unit 16a includes a first data non-linear element 161a, and the first data non-linear element 161a is connected in a reverse bias state between the first common line 17a and the data lines 10.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF NUCLEAR OR X-RADIATION ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191210&amp;DB=EPODOC&amp;CC=US&amp;NR=10504888B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191210&amp;DB=EPODOC&amp;CC=US&amp;NR=10504888B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Moriwaki, Hiroyuki</creatorcontrib><creatorcontrib>Nakano, Fumiki</creatorcontrib><creatorcontrib>Nakamura, Wataru</creatorcontrib><creatorcontrib>Kubota, Akinori</creatorcontrib><title>Active matrix substrate and X-ray imaging panel including same</title><description>An active matrix substrate 1 includes photoelectric conversion elements that are respectively provided with respect to a plurality of pixels defined by gate lines and data lines 10, and a bias line 13 supplying a bias voltage to each photoelectric conversion element. Further, the active matrix substrate 1 further includes a plurality of data protection circuit units 16a that are connected with the data lines 10, respectively, and a first common line 17a that is connected with the data protection circuits 16a and has a potential equal to or lower than those of the data lines 10, outside the image pickup area composed of a plurality of pixels. The data protection circuit unit 16a includes a first data non-linear element 161a, and the first data non-linear element 161a is connected in a reverse bias state between the first common line 17a and the data lines 10.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASUREMENT OF NUCLEAR OR X-RADIATION</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBzTC7JLEtVyE0sKcqsUCguTSouKUosSVVIzEtRiNAtSqxUyMxNTM_MS1coSMxLzVHIzEvOKU0B8YsTc1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChgamBiYWFhZORMTFqAEDoMH4</recordid><startdate>20191210</startdate><enddate>20191210</enddate><creator>Moriwaki, Hiroyuki</creator><creator>Nakano, Fumiki</creator><creator>Nakamura, Wataru</creator><creator>Kubota, Akinori</creator><scope>EVB</scope></search><sort><creationdate>20191210</creationdate><title>Active matrix substrate and X-ray imaging panel including same</title><author>Moriwaki, Hiroyuki ; Nakano, Fumiki ; Nakamura, Wataru ; Kubota, Akinori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10504888B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASUREMENT OF NUCLEAR OR X-RADIATION</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Moriwaki, Hiroyuki</creatorcontrib><creatorcontrib>Nakano, Fumiki</creatorcontrib><creatorcontrib>Nakamura, Wataru</creatorcontrib><creatorcontrib>Kubota, Akinori</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Moriwaki, Hiroyuki</au><au>Nakano, Fumiki</au><au>Nakamura, Wataru</au><au>Kubota, Akinori</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Active matrix substrate and X-ray imaging panel including same</title><date>2019-12-10</date><risdate>2019</risdate><abstract>An active matrix substrate 1 includes photoelectric conversion elements that are respectively provided with respect to a plurality of pixels defined by gate lines and data lines 10, and a bias line 13 supplying a bias voltage to each photoelectric conversion element. Further, the active matrix substrate 1 further includes a plurality of data protection circuit units 16a that are connected with the data lines 10, respectively, and a first common line 17a that is connected with the data protection circuits 16a and has a potential equal to or lower than those of the data lines 10, outside the image pickup area composed of a plurality of pixels. The data protection circuit unit 16a includes a first data non-linear element 161a, and the first data non-linear element 161a is connected in a reverse bias state between the first common line 17a and the data lines 10.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10504888B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title Active matrix substrate and X-ray imaging panel including same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T14%3A22%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Moriwaki,%20Hiroyuki&rft.date=2019-12-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10504888B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true