Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems
Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems is disclosed. In one aspect, a processor-based system includes a DRAM circuit (e.g., disposed on a common x4/x8 die) providing 4-bit-wide data access ("x4") and a 128-bit internal data prefetch....
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creator | Wang, Liyong Queen, Wesley Bains, Kuljit Singh |
description | Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems is disclosed. In one aspect, a processor-based system includes a DRAM circuit (e.g., disposed on a common x4/x8 die) providing 4-bit-wide data access ("x4") and a 128-bit internal data prefetch. When operated in a x4 mode, the DRAM circuit is configured to provide an extended DRAM burst length of 32 bits ("BL32"). The DRAM circuit receives a memory read request from a memory controller communicatively coupled to the DRAM circuit, prefetches 128 bits of data, and returns all of the 128 bits of fetched data to the memory controller in response to the memory read request. In some aspects, the DRAM circuit may also receive a memory write command including 128 bits of write data from the memory controller, and write the 128 bits of write data to memory without performing a read/modify/write (RMW) operation. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10503435B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10503435B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10503435B23</originalsourceid><addsrcrecordid>eNqNzDsKAjEQgOE0FqLeYey0WFiNewCf2Ajio16yybgGNpOQiWJur4IHsPqbj78v6mP0T2sstYCvhGTQgMmknNUQFRnvQGmNzODQ-ZhhsjktD1NoHpETdEhtujNYghD9l_lYNIo_E86c0PFQ9G6qYxz9OhDj3fay3hcYfI0clEbCVF_Ps7Iq5UJWq7n8x7wBX_s8zQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems</title><source>esp@cenet</source><creator>Wang, Liyong ; Queen, Wesley ; Bains, Kuljit Singh</creator><creatorcontrib>Wang, Liyong ; Queen, Wesley ; Bains, Kuljit Singh</creatorcontrib><description>Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems is disclosed. In one aspect, a processor-based system includes a DRAM circuit (e.g., disposed on a common x4/x8 die) providing 4-bit-wide data access ("x4") and a 128-bit internal data prefetch. When operated in a x4 mode, the DRAM circuit is configured to provide an extended DRAM burst length of 32 bits ("BL32"). The DRAM circuit receives a memory read request from a memory controller communicatively coupled to the DRAM circuit, prefetches 128 bits of data, and returns all of the 128 bits of fetched data to the memory controller in response to the memory read request. In some aspects, the DRAM circuit may also receive a memory write command including 128 bits of write data from the memory controller, and write the 128 bits of write data to memory without performing a read/modify/write (RMW) operation.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191210&DB=EPODOC&CC=US&NR=10503435B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191210&DB=EPODOC&CC=US&NR=10503435B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wang, Liyong</creatorcontrib><creatorcontrib>Queen, Wesley</creatorcontrib><creatorcontrib>Bains, Kuljit Singh</creatorcontrib><title>Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems</title><description>Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems is disclosed. In one aspect, a processor-based system includes a DRAM circuit (e.g., disposed on a common x4/x8 die) providing 4-bit-wide data access ("x4") and a 128-bit internal data prefetch. When operated in a x4 mode, the DRAM circuit is configured to provide an extended DRAM burst length of 32 bits ("BL32"). The DRAM circuit receives a memory read request from a memory controller communicatively coupled to the DRAM circuit, prefetches 128 bits of data, and returns all of the 128 bits of fetched data to the memory controller in response to the memory read request. In some aspects, the DRAM circuit may also receive a memory write command including 128 bits of write data from the memory controller, and write the 128 bits of write data to memory without performing a read/modify/write (RMW) operation.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzDsKAjEQgOE0FqLeYey0WFiNewCf2Ajio16yybgGNpOQiWJur4IHsPqbj78v6mP0T2sstYCvhGTQgMmknNUQFRnvQGmNzODQ-ZhhsjktD1NoHpETdEhtujNYghD9l_lYNIo_E86c0PFQ9G6qYxz9OhDj3fay3hcYfI0clEbCVF_Ps7Iq5UJWq7n8x7wBX_s8zQ</recordid><startdate>20191210</startdate><enddate>20191210</enddate><creator>Wang, Liyong</creator><creator>Queen, Wesley</creator><creator>Bains, Kuljit Singh</creator><scope>EVB</scope></search><sort><creationdate>20191210</creationdate><title>Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems</title><author>Wang, Liyong ; Queen, Wesley ; Bains, Kuljit Singh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10503435B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Liyong</creatorcontrib><creatorcontrib>Queen, Wesley</creatorcontrib><creatorcontrib>Bains, Kuljit Singh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Liyong</au><au>Queen, Wesley</au><au>Bains, Kuljit Singh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems</title><date>2019-12-10</date><risdate>2019</risdate><abstract>Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems is disclosed. In one aspect, a processor-based system includes a DRAM circuit (e.g., disposed on a common x4/x8 die) providing 4-bit-wide data access ("x4") and a 128-bit internal data prefetch. When operated in a x4 mode, the DRAM circuit is configured to provide an extended DRAM burst length of 32 bits ("BL32"). The DRAM circuit receives a memory read request from a memory controller communicatively coupled to the DRAM circuit, prefetches 128 bits of data, and returns all of the 128 bits of fetched data to the memory controller in response to the memory read request. In some aspects, the DRAM circuit may also receive a memory write command including 128 bits of write data from the memory controller, and write the 128 bits of write data to memory without performing a read/modify/write (RMW) operation.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | Providing extended dynamic random access memory (DRAM) burst lengths in processor-based systems |
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