Enhanced dynamic range imaging
A pixel element for an imaging sensor comprises a semiconductor substrate, a radiation-sensitive element configured to generate electric charges in response to incident radiation, a charge accumulation region provided in the semiconductor substrate configured to accumulate at least a portion of the...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A pixel element for an imaging sensor comprises a semiconductor substrate, a radiation-sensitive element configured to generate electric charges in response to incident radiation, a charge accumulation region provided in the semiconductor substrate configured to accumulate at least a portion of the electric charges, and an electrode arranged on the semiconductor substrate adjacent to the charge accumulation region. The electrode is electrically insulated from the semiconductor substrate such as to form an inversion region in the semiconductor substrate that connects to the charge accumulation region when a voltage is applied to said electrode. |
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