Memory control circuit, memory, and memory control method
A memory control circuit includes an input circuit that receives data to be written to a storage having multiple nonvolatile memory cells, and a control circuit, when a second number of bits that are included in a first bit string and having a first number of bits and have a second logical value dif...
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| creator | Maeda, Masazumi Ise, Masahiro |
| description | A memory control circuit includes an input circuit that receives data to be written to a storage having multiple nonvolatile memory cells, and a control circuit, when a second number of bits that are included in a first bit string and having a first number of bits and have a second logical value different from a first logical value equal to initial values stored in the multiple nonvolatile memory cells is equal to or smaller than a first threshold, writes the first bit string and the first additional value to the storage, and that associates, when the second number of the bits is larger than a second threshold larger than the first threshold, a second bit string obtained by reversing logical values of all the bits of the first bit string with a second additional value and writes the second bit string and the second additional value to the storage. |
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Ise, Masahiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10497445B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Maeda, Masazumi</creatorcontrib><creatorcontrib>Ise, Masahiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Maeda, Masazumi</au><au>Ise, Masahiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory control circuit, memory, and memory control method</title><date>2019-12-03</date><risdate>2019</risdate><abstract>A memory control circuit includes an input circuit that receives data to be written to a storage having multiple nonvolatile memory cells, and a control circuit, when a second number of bits that are included in a first bit string and having a first number of bits and have a second logical value different from a first logical value equal to initial values stored in the multiple nonvolatile memory cells is equal to or smaller than a first threshold, writes the first bit string and the first additional value to the storage, and that associates, when the second number of the bits is larger than a second threshold larger than the first threshold, a second bit string obtained by reversing logical values of all the bits of the first bit string with a second additional value and writes the second bit string and the second additional value to the storage.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Memory control circuit, memory, and memory control method |
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