Semiconductor device with air gap and method for fabricating the same

A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended i...

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Bibliographische Detailangaben
Hauptverfasser: Jung, Tae-Woo, Choi, Yun-Je, Park, Hae-Jung, Cheong, Jung-Taik
Format: Patent
Sprache:eng
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