Capacitive tuning using backside gate

A radio frequency (RF) integrated circuit (RFIC) switch multi-finger transistor includes a first dual gate transistor having a first gate with a first gate length on a first side of a substrate, and a second gate with a second gate length on a second side of the substrate. The RFIC also includes a s...

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Bibliographische Detailangaben

1. Verfasser:	Vedula, Ravi Pramod Kumar
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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