Deposition apparatus and method for manufacturing semiconductor device using the same

A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of...

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Bibliographische Detailangaben
Hauptverfasser:	Hsieh, Ju-Ru, Yang, Jen-Hao, Guo, Ren-Hua
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.