Device chip manufacturing method

A device chip manufacturing method includes a passivation film removing step of removing a passivation film along each division line, a wafer dividing step of performing plasma etching using a fluorine-based gas to the front side of a wafer in the condition where the passivation film is used as a ma...

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Bibliographische Detailangaben
1. Verfasser: Tabuchi, Tomotaka
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A device chip manufacturing method includes a passivation film removing step of removing a passivation film along each division line, a wafer dividing step of performing plasma etching using a fluorine-based gas to the front side of a wafer in the condition where the passivation film is used as a mask, thereby dividing the wafer along the division lines, and a die attach film removing step of performing plasma etching using an oxygen-based gas to the front side of the wafer in the condition where the passivation film is used as a mask, thereby removing a part or the whole of a die attach film along each division line.