Substrate processing system and substrate processing method

There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hamada, Yasuhiro, Okada, Mitsuhiro, Kakimoto, Akinobu, Hayakawa, Yoshinobu, Mizunaga, Satoshi
Format: Patent
Sprache:eng
Schlagworte:
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