Through-silicon via with improved substrate contact for reduced through-silicon via (TSV) capacitance variability
The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a th...
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| creator | Nxumalo, Jochonia N Safran, John M Liu, Joyce C Rosenblatt, Sami Kothandaraman, Chandrasekharan |
| description | The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Through-silicon via with improved substrate contact for reduced through-silicon via (TSV) capacitance variability |
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