Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic...

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Bibliographische Detailangaben
Hauptverfasser:	Moon, Kiseok, Tang, Xueti, Diao, Zhitao, Krounbi, Mohamad Towfik, Watts, Steven M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TESTING TRANSFORMERS TRANSPORTING
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