Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition
[Problem] To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. [Solution] Disclosed is a composi...
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| creator | Noya, Go Nakasugi, Shigemasa Kinuta, Takafumi |
| description | [Problem] To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. [Solution] Disclosed is a composition for gap formation comprising a polymer and a solvent:
wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2):
[each of Ar 1 , Ar 2 and Ar 2' is independently a substituted or unsabstituted aromatic group; and each of L 1 and L 2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3):
{Ar 3 is an aromatic group; and L 3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}]. |
| format | Patent |
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wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2):
[each of Ar 1 , Ar 2 and Ar 2' is independently a substituted or unsabstituted aromatic group; and each of L 1 and L 2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3):
{Ar 3 is an aromatic group; and L 3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191008&DB=EPODOC&CC=US&NR=10435555B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191008&DB=EPODOC&CC=US&NR=10435555B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Noya, Go</creatorcontrib><creatorcontrib>Nakasugi, Shigemasa</creatorcontrib><creatorcontrib>Kinuta, Takafumi</creatorcontrib><title>Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition</title><description>[Problem] To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. [Solution] Disclosed is a composition for gap formation comprising a polymer and a solvent:
wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2):
[each of Ar 1 , Ar 2 and Ar 2' is independently a substituted or unsabstituted aromatic group; and each of L 1 and L 2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3):
{Ar 3 is an aromatic group; and L 3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTsOwjAQRN1QIOAOSw8SELgACETPp40se5OshL2Wf1yHo2IiulAwzUijmTdj8bozaWjYG7ItKDaOA0Viu4CAhhRbnVRkDxozKQTnOZNGDU-KHeQyDv26JCkMENJqMBg77i_ASJsaqWLyn-ZP_gAyFaNGPgLOvj4R89Pxejgv0XGNwUmFFmN9u6xX22pXtN9U_3TeVwtXPw</recordid><startdate>20191008</startdate><enddate>20191008</enddate><creator>Noya, Go</creator><creator>Nakasugi, Shigemasa</creator><creator>Kinuta, Takafumi</creator><scope>EVB</scope></search><sort><creationdate>20191008</creationdate><title>Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition</title><author>Noya, Go ; Nakasugi, Shigemasa ; Kinuta, Takafumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10435555B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>Noya, Go</creatorcontrib><creatorcontrib>Nakasugi, Shigemasa</creatorcontrib><creatorcontrib>Kinuta, Takafumi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Noya, Go</au><au>Nakasugi, Shigemasa</au><au>Kinuta, Takafumi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition</title><date>2019-10-08</date><risdate>2019</risdate><abstract>[Problem] To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. [Solution] Disclosed is a composition for gap formation comprising a polymer and a solvent:
wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2):
[each of Ar 1 , Ar 2 and Ar 2' is independently a substituted or unsabstituted aromatic group; and each of L 1 and L 2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3):
{Ar 3 is an aromatic group; and L 3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition |
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