Trench semiconductor device having multiple active trench depths and method

In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. A second active trench is configured to...

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Bibliographische Detailangaben

Hauptverfasser:	Quddus, Mohammed Tanvir, Thomason, Michael, Mudholkar, Mihir
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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