Memory system

According to one embodiment, a first string is coupled to the bit line via a first transistor and includes a first cell transistor. A second string is coupled to the bit line via a second transistor and includes a second cell transistor. The first and second cell transistors are coupled to the word line. A controller is configured to instruct the memory device to write first data to the first cell transistor and to write second data to the second cell transistor. The controller is further configured to instruct the memory device to read data from the first cell transistor while storing the first data and the second data after making the instruction for writing the first data and the second data.