Methods of forming memory cells and semiconductor devices

Methods of forming memory cells and semiconductor devices

A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and t...

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Hauptverfasser: Ramaswamy, D. V. Nirmal, Tao, Qian, Hu, Yongjun Jeff, McTeer, Everett A, Chan, Tsz W
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Ramaswamy, D. V. Nirmal
Tao, Qian
Hu, Yongjun Jeff
McTeer, Everett A
Chan, Tsz W
description A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10418554B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10418554B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10418554B23</originalsourceid><addsrcrecordid>eNrjZLD0TS3JyE8pVshPU0jLL8rNzEtXyE3NzS-qVEhOzckpVkjMS1EoTs3NTM7PSylNLskvUkhJLctMTi3mYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBiaGFqamJk5GxsSoAQBVqi8I</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods of forming memory cells and semiconductor devices</title><source>esp@cenet</source><creator>Ramaswamy, D. V. Nirmal ; Tao, Qian ; Hu, Yongjun Jeff ; McTeer, Everett A ; Chan, Tsz W</creator><creatorcontrib>Ramaswamy, D. V. Nirmal ; Tao, Qian ; Hu, Yongjun Jeff ; McTeer, Everett A ; Chan, Tsz W</creatorcontrib><description>A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190917&amp;DB=EPODOC&amp;CC=US&amp;NR=10418554B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190917&amp;DB=EPODOC&amp;CC=US&amp;NR=10418554B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ramaswamy, D. V. Nirmal</creatorcontrib><creatorcontrib>Tao, Qian</creatorcontrib><creatorcontrib>Hu, Yongjun Jeff</creatorcontrib><creatorcontrib>McTeer, Everett A</creatorcontrib><creatorcontrib>Chan, Tsz W</creatorcontrib><title>Methods of forming memory cells and semiconductor devices</title><description>A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD0TS3JyE8pVshPU0jLL8rNzEtXyE3NzS-qVEhOzckpVkjMS1EoTs3NTM7PSylNLskvUkhJLctMTi3mYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBiaGFqamJk5GxsSoAQBVqi8I</recordid><startdate>20190917</startdate><enddate>20190917</enddate><creator>Ramaswamy, D. V. Nirmal</creator><creator>Tao, Qian</creator><creator>Hu, Yongjun Jeff</creator><creator>McTeer, Everett A</creator><creator>Chan, Tsz W</creator><scope>EVB</scope></search><sort><creationdate>20190917</creationdate><title>Methods of forming memory cells and semiconductor devices</title><author>Ramaswamy, D. V. Nirmal ; Tao, Qian ; Hu, Yongjun Jeff ; McTeer, Everett A ; Chan, Tsz W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10418554B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Ramaswamy, D. V. Nirmal</creatorcontrib><creatorcontrib>Tao, Qian</creatorcontrib><creatorcontrib>Hu, Yongjun Jeff</creatorcontrib><creatorcontrib>McTeer, Everett A</creatorcontrib><creatorcontrib>Chan, Tsz W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ramaswamy, D. V. Nirmal</au><au>Tao, Qian</au><au>Hu, Yongjun Jeff</au><au>McTeer, Everett A</au><au>Chan, Tsz W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods of forming memory cells and semiconductor devices</title><date>2019-09-17</date><risdate>2019</risdate><abstract>A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Methods of forming memory cells and semiconductor devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T19%3A24%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ramaswamy,%20D.%20V.%20Nirmal&rft.date=2019-09-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10418554B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true