Buried local interconnect in source/drain region

A method for forming a buried local interconnect in a source/drain region is disclosed including, among other things, forming a plurality of VOC structures, forming a first source/drain region between a first pair of the plurality of VOC structures, forming a second source/drain region between a sec...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Soss, Steven R, Bentley, Steven J, Paul, Bipul C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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