Scalable thermoelectric-based infrared detector
Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectr...
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creator | Kropelnicki, Piotr Pontin, Paul Simon Ocak, Ilker Ender |
description | Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component. |
format | Patent |
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The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. 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The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. 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The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING TRANSPORTING |
title | Scalable thermoelectric-based infrared detector |
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