Substrate processing device and method of manufacturing semiconductor device
A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containin...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Yamada, Hiroaki Sato, Katsuhiro Muraki, Shinsuke Akeboshi, Yuya |
| description | A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10403524B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10403524B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10403524B23</originalsourceid><addsrcrecordid>eNqNyzEOwjAMQNEsDAi4gzkAUmnLBUAgBrbCXBnHKZFIHCUO50dIPQDTX95fmttQn0UzKkPKQlyKjxNY_nhiwGghsL7EgjgIGKtD0pp_pHDwJNFWUsnzsDYLh-_Cm7krs72c76frjpOMXBISR9bxMeybvukObX9su3_MF_p2NqM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Substrate processing device and method of manufacturing semiconductor device</title><source>esp@cenet</source><creator>Yamada, Hiroaki ; Sato, Katsuhiro ; Muraki, Shinsuke ; Akeboshi, Yuya</creator><creatorcontrib>Yamada, Hiroaki ; Sato, Katsuhiro ; Muraki, Shinsuke ; Akeboshi, Yuya</creatorcontrib><description>A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190903&DB=EPODOC&CC=US&NR=10403524B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190903&DB=EPODOC&CC=US&NR=10403524B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yamada, Hiroaki</creatorcontrib><creatorcontrib>Sato, Katsuhiro</creatorcontrib><creatorcontrib>Muraki, Shinsuke</creatorcontrib><creatorcontrib>Akeboshi, Yuya</creatorcontrib><title>Substrate processing device and method of manufacturing semiconductor device</title><description>A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyzEOwjAMQNEsDAi4gzkAUmnLBUAgBrbCXBnHKZFIHCUO50dIPQDTX95fmttQn0UzKkPKQlyKjxNY_nhiwGghsL7EgjgIGKtD0pp_pHDwJNFWUsnzsDYLh-_Cm7krs72c76frjpOMXBISR9bxMeybvukObX9su3_MF_p2NqM</recordid><startdate>20190903</startdate><enddate>20190903</enddate><creator>Yamada, Hiroaki</creator><creator>Sato, Katsuhiro</creator><creator>Muraki, Shinsuke</creator><creator>Akeboshi, Yuya</creator><scope>EVB</scope></search><sort><creationdate>20190903</creationdate><title>Substrate processing device and method of manufacturing semiconductor device</title><author>Yamada, Hiroaki ; Sato, Katsuhiro ; Muraki, Shinsuke ; Akeboshi, Yuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10403524B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Yamada, Hiroaki</creatorcontrib><creatorcontrib>Sato, Katsuhiro</creatorcontrib><creatorcontrib>Muraki, Shinsuke</creatorcontrib><creatorcontrib>Akeboshi, Yuya</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yamada, Hiroaki</au><au>Sato, Katsuhiro</au><au>Muraki, Shinsuke</au><au>Akeboshi, Yuya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing device and method of manufacturing semiconductor device</title><date>2019-09-03</date><risdate>2019</risdate><abstract>A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US10403524B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Substrate processing device and method of manufacturing semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T05%3A54%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Yamada,%20Hiroaki&rft.date=2019-09-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10403524B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |