Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is direc...
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| creator | Schueler, Bruno W Smedt, Rodney Newcome, Bruce H Bevis, Chris Reed, David A |
| description | Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA). |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10403489B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10403489B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10403489B23</originalsourceid><addsrcrecordid>eNqNjDEOwjAQBN1QIOAPxwOQAkkBLQhEH6ijk3NOLMU-y-cU_j0O4gFUuyvN7Fq5NksiJ4C-BwwhMuqRBAxHEHJWs-9nncpylCJPPOQvKnM0qKl0nLJYgVmsH4qyCBgzWPbgUAQkkC7mouetWhmchHa_3Kj94_66PQ8UuCMJ5dFT6t7tsWqqujlfrqf6H-YDKUhDtA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry</title><source>esp@cenet</source><creator>Schueler, Bruno W ; Smedt, Rodney ; Newcome, Bruce H ; Bevis, Chris ; Reed, David A</creator><creatorcontrib>Schueler, Bruno W ; Smedt, Rodney ; Newcome, Bruce H ; Bevis, Chris ; Reed, David A</creatorcontrib><description>Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).</description><language>eng</language><subject>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] ; BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SCANNING-PROBE TECHNIQUES OR APPARATUS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190903&DB=EPODOC&CC=US&NR=10403489B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190903&DB=EPODOC&CC=US&NR=10403489B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Schueler, Bruno W</creatorcontrib><creatorcontrib>Smedt, Rodney</creatorcontrib><creatorcontrib>Newcome, Bruce H</creatorcontrib><creatorcontrib>Bevis, Chris</creatorcontrib><creatorcontrib>Reed, David A</creatorcontrib><title>Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry</title><description>Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).</description><subject>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SCANNING-PROBE TECHNIQUES OR APPARATUS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDEOwjAQBN1QIOAPxwOQAkkBLQhEH6ijk3NOLMU-y-cU_j0O4gFUuyvN7Fq5NksiJ4C-BwwhMuqRBAxHEHJWs-9nncpylCJPPOQvKnM0qKl0nLJYgVmsH4qyCBgzWPbgUAQkkC7mouetWhmchHa_3Kj94_66PQ8UuCMJ5dFT6t7tsWqqujlfrqf6H-YDKUhDtA</recordid><startdate>20190903</startdate><enddate>20190903</enddate><creator>Schueler, Bruno W</creator><creator>Smedt, Rodney</creator><creator>Newcome, Bruce H</creator><creator>Bevis, Chris</creator><creator>Reed, David A</creator><scope>EVB</scope></search><sort><creationdate>20190903</creationdate><title>Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry</title><author>Schueler, Bruno W ; Smedt, Rodney ; Newcome, Bruce H ; Bevis, Chris ; Reed, David A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10403489B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SCANNING-PROBE TECHNIQUES OR APPARATUS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Schueler, Bruno W</creatorcontrib><creatorcontrib>Smedt, Rodney</creatorcontrib><creatorcontrib>Newcome, Bruce H</creatorcontrib><creatorcontrib>Bevis, Chris</creatorcontrib><creatorcontrib>Reed, David A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schueler, Bruno W</au><au>Smedt, Rodney</au><au>Newcome, Bruce H</au><au>Bevis, Chris</au><au>Reed, David A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry</title><date>2019-09-03</date><risdate>2019</risdate><abstract>Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS SEMICONDUCTOR DEVICES TESTING |
| title | Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry |
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