III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same

A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers. The light emitting region is sandwiched between n- and p-type III-nitride cladding layers and includes mult...

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Bibliographische Detailangaben

Hauptverfasser:	Chen, Jyh-Chia, El-Ghoroury, Hussein S, Chuang, Chih-Li, Yeh, Yea-Chuan Milton, Li, Xing
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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