Multi-phase half bridge driver package and methods of manufacture
A semiconductor package includes a plurality of half bridge assemblies each including a metal lead, a first power transistor die attached to a first side of the metal lead, and a second power transistor die disposed under the first power transistor die and attached to a second side of the metal lead...
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creator | Chiang, Chau Fatt Long, Theng Chao Koo, Wei Han Kucher, Andreas Cha, Chan Lam |
description | A semiconductor package includes a plurality of half bridge assemblies each including a metal lead, a first power transistor die attached to a first side of the metal lead, and a second power transistor die disposed under the first power transistor die and attached to a second side of the metal lead opposite the first side. Each metal lead has a notch which exposes one or more bond pads at a side of the second power transistor die attached to the metal lead. The semiconductor package also includes a controller die configured to control the power transistor dies. Each power transistor die, each metal lead and the controller die are embedded in a mold compound. Bond wire connections are provided between the controller die and the one or more bond pads at the side of each second power transistor die exposed by the notch in the corresponding metal lead. |
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Each metal lead has a notch which exposes one or more bond pads at a side of the second power transistor die attached to the metal lead. The semiconductor package also includes a controller die configured to control the power transistor dies. Each power transistor die, each metal lead and the controller die are embedded in a mold compound. 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Each metal lead has a notch which exposes one or more bond pads at a side of the second power transistor die attached to the metal lead. The semiconductor package also includes a controller die configured to control the power transistor dies. Each power transistor die, each metal lead and the controller die are embedded in a mold compound. Bond wire connections are provided between the controller die and the one or more bond pads at the side of each second power transistor die exposed by the notch in the corresponding metal lead.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORSOR DYNAMO-ELECTRIC CONVERTERS CONTROL OR REGULATION THEREOF CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION PULSE TECHNIQUE SEMICONDUCTOR DEVICES |
title | Multi-phase half bridge driver package and methods of manufacture |
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