Selective film formation for raised and recessed features using deposition and etching processes

Embodiments of the invention provide a processing method for selective film formation for raised and recessed features using deposition and etching processes. According to one embodiment, the method includes providing a substrate having a recessed feature with a sidewall and a bottom portion, and de...

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Bibliographische Detailangaben

1. Verfasser:	Tapily, Kandabara N
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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