Method for manufacturing secondary cell
A method for manufacturing a secondary cell, the secondary cell including a charging layer that captures electrons by forming energy levels in a band gap by causing a photoexcited structural change in an n-type metal oxide semiconductor coated with an insulating material, includes a coating step to...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Saito, Tomokazu Dewa, Harutada |
description | A method for manufacturing a secondary cell, the secondary cell including a charging layer that captures electrons by forming energy levels in a band gap by causing a photoexcited structural change in an n-type metal oxide semiconductor coated with an insulating material, includes a coating step to coat a coating liquid so as to form a coating film that includes constituents that will form the charging layer; a drying step to dry the coating liquid coated in the coating step; a UV irradiating step to form a UV-irradiated coating film by irradiating the dried coating film obtained through the drying step with ultraviolet light; and a burning step to burn a plurality of the UV-irradiated coating films, after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step, the drying step, and the UV irradiating step. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10367140B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10367140B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10367140B23</originalsourceid><addsrcrecordid>eNrjZFD3TS3JyE9RSMsvUshNzCtNS0wuKS3KzEtXKE5Nzs9LSSyqVEhOzcnhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBsZm5oYmBk5GxsSoAQCzgygy</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for manufacturing secondary cell</title><source>esp@cenet</source><creator>Saito, Tomokazu ; Dewa, Harutada</creator><creatorcontrib>Saito, Tomokazu ; Dewa, Harutada</creatorcontrib><description>A method for manufacturing a secondary cell, the secondary cell including a charging layer that captures electrons by forming energy levels in a band gap by causing a photoexcited structural change in an n-type metal oxide semiconductor coated with an insulating material, includes a coating step to coat a coating liquid so as to form a coating film that includes constituents that will form the charging layer; a drying step to dry the coating liquid coated in the coating step; a UV irradiating step to form a UV-irradiated coating film by irradiating the dried coating film obtained through the drying step with ultraviolet light; and a burning step to burn a plurality of the UV-irradiated coating films, after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step, the drying step, and the UV irradiating step.</description><language>eng</language><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PERFORMING OPERATIONS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; TRANSPORTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190730&DB=EPODOC&CC=US&NR=10367140B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190730&DB=EPODOC&CC=US&NR=10367140B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Saito, Tomokazu</creatorcontrib><creatorcontrib>Dewa, Harutada</creatorcontrib><title>Method for manufacturing secondary cell</title><description>A method for manufacturing a secondary cell, the secondary cell including a charging layer that captures electrons by forming energy levels in a band gap by causing a photoexcited structural change in an n-type metal oxide semiconductor coated with an insulating material, includes a coating step to coat a coating liquid so as to form a coating film that includes constituents that will form the charging layer; a drying step to dry the coating liquid coated in the coating step; a UV irradiating step to form a UV-irradiated coating film by irradiating the dried coating film obtained through the drying step with ultraviolet light; and a burning step to burn a plurality of the UV-irradiated coating films, after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step, the drying step, and the UV irradiating step.</description><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD3TS3JyE9RSMsvUshNzCtNS0wuKS3KzEtXKE5Nzs9LSSyqVEhOzcnhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBsZm5oYmBk5GxsSoAQCzgygy</recordid><startdate>20190730</startdate><enddate>20190730</enddate><creator>Saito, Tomokazu</creator><creator>Dewa, Harutada</creator><scope>EVB</scope></search><sort><creationdate>20190730</creationdate><title>Method for manufacturing secondary cell</title><author>Saito, Tomokazu ; Dewa, Harutada</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10367140B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Saito, Tomokazu</creatorcontrib><creatorcontrib>Dewa, Harutada</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Saito, Tomokazu</au><au>Dewa, Harutada</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for manufacturing secondary cell</title><date>2019-07-30</date><risdate>2019</risdate><abstract>A method for manufacturing a secondary cell, the secondary cell including a charging layer that captures electrons by forming energy levels in a band gap by causing a photoexcited structural change in an n-type metal oxide semiconductor coated with an insulating material, includes a coating step to coat a coating liquid so as to form a coating film that includes constituents that will form the charging layer; a drying step to dry the coating liquid coated in the coating step; a UV irradiating step to form a UV-irradiated coating film by irradiating the dried coating film obtained through the drying step with ultraviolet light; and a burning step to burn a plurality of the UV-irradiated coating films, after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step, the drying step, and the UV irradiating step.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US10367140B2 |
source | esp@cenet |
subjects | APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING |
title | Method for manufacturing secondary cell |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T02%3A58%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Saito,%20Tomokazu&rft.date=2019-07-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10367140B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |